In the Silicon and Silicon Devices Group, the solar cell fabrication laboratory was reactivated and processing of p+-p-n+ silicon solar cell on 50 mm diameter wafers was carried out on polished and anisotropically textured silicon wafers. Open circuit voltage >600mV, short circuit current Jsc ~24 mA/ cm2 on polished and ~31 mA/cm2 on textured cells were achieved. The best conversion efficiency of 12.4% (without anti-reflection coating) on 18cm2 area was achieved.