ZnO exhibits a variety of nanostructures. These nanostructures form the basis of next generation electronics, photonics and a variety of other applications related to the field of environment and biotechnolgy. ZnO is a semiconductor with a wide band gap of 3.37 eV and large exciton binding energy of 60 meV. In the present work inexpensive sol-gel technique is used as compared to other expensive techniques such as MBE, MOCVD, PLD etc.